BFP620F_13 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – Low Noise SiGe:C Bipolar RF Transistor

Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 50mA
f = Parameter in GHz
30
dB
0.9
24
1.8
20
2.4
3
16
4
12
5
6
8
4
0
-4
0.2 0.6
1
1.4
1.8
V
2.6
V_CE
Noise figure F = ƒ(I_C)
V_CE = 1.5V, f = 1.8 GHz
Noise figure F = ƒ(I_C)
V_CE = 1.5V, Z_S = Z_Sopt
BFP620F
3
2.5
2
1.5
1
0.5
0
0
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
10
20
30
40
50
60
70
80
I [mA]
c
Noise figure F = ƒ(f)
V_CE = 1.5V, Z_S = Z_Sopt
3
2.5
2
1.5
1
Z = 50Ω
S
Z =Z
S
Sopt
0.5
0
0
10
20
30
40
50
60
70
80
I [mA]
c
2.5
2
1.5
I = 50mA
C
I = 5.0mA
C
1
0.5
0
1
2
3
4
5
6
7
f [GHz]
6
2013-09-09