BFP620F_13 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Low Noise SiGe:C Bipolar RF Transistor

Low Noise SiGe:C Bipolar RF Transistor
• High gain low noise RF transistor
• Based on Infineon's reliable high volume
Silicon Germanium technology
• Outstanding noise figure NF_min = 0.7 dB at 1.8 GHz
Outstanding noise figure NF_min = 1.3 dB at 6 GHz
• Maximum stable gain
G_ms = 21 dB at 1.8 GHz
G_ma = 10 dB at 6 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package (1.4 x 0.8 x 0.59 mm) with visible leads
• Qualification report according to AEC-Q101 available
BFP620F
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620F
Marking
Pin Configuration
R2s
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A = 25 °C
T_A = -55 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation¹⁾
P_tot
T_S ≤ 96°C
Junction temperature
T_J
Storage temperature
T_Stg
1_{TS is measured on the emitter lead at the soldering point to the pcb}
1
Value
Unit
V
2.3
2.1
7.5
7.5
1.2
80
mA
3
185
mW
150
°C
-55 ... 150
2013-09-09