BFP620FH7764 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f =1.8GHz
30
dBm
2.3V
1.7V
20
1.4V
15
1.1V
10
0.8V
5
0
-5
0 10 20 30 40 50 60 70 mA 90
I_C
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 1.5V
f = Parameter in GHz
30
dB
0.9
26
24
22
1.8
20
18
2.4
16
3
14
4
12
5
10
6
8
6
0 10 20 30 40 50 60 70 mA 90
I_C
BFP620F
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = Parameter in V
70
GHz
60
1 to 2.3
55
50
45
40
0.8
35
30
25
20
15
10
0.3
0.5
5
0
0 10 20 30 40 50 60 70 80 mA 100
I_C
Power Gain G_ma, G_ms = ƒ(f),
|S₂₁|² = f (f)
V_CE = 1.5V, I_C = 50mA
50
dB
40
35
30
Gms
25
20
|S21|²
15
Gma
10
5
0
1
2
3
4 GHz
6
f
2007-04-20
6