BFP620FH7764 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor*
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
G_ms = 21 dB at 1.8 GHz
G_ma = 10 dB at 6 GHz
• Gold metallization for extra high reliability
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFP620F
3
2
4
1
Top View
43
XYs
12
Direction of Unreeling
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP620F
Marking
Pin Configuration
R2s
1=B 2=E 3=C 4=E -
-
Package
TSFP-4
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CEO
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Base current
I_B
Total power dissipation²⁾
P_tot
T_S ≤ 96°C
Junction temperature
T_j
Ambient temperature
T_A
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
2_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
2.3
2.1
7.5
7.5
1.2
80
mA
3
185
mW
150
°C
-65 ... 150
-65 ... 150
2007-04-20
1