BFP620 Datasheet, PDF (6/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 900MHz -
27
dBm
2.3V
1.8V
21
18
15
1.3V
12
0.8V
9
6
3
0
0
10 20 30 40 50 60 70 80 ^mA 100
I_C
Power gain G_ma, G_ms = ƒ(I_C)
V_CE = 1.5V
f = Parameter in GHz
30
dB
0.9
26
24
22
1.8
20
18
2.4
16
3
14
4
12
5
10
6
8
0
10 20 30 40 50 60 70 ^mA
90
I_C
BFP620
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = Parameter in V
65
GHz
55
1.3 to 2.3
50
45
1
40
35
30
25
0.8
0.5
20
15
0.3
10
5
0
0
10 20 30 40 50 60 70 80 ^mA 100
I_C
Power Gain G_ma, G_ms = ƒ(f),
|S₂₁|² = f (f)
V_CE = 1.5V, I_C = 50mA
55
dB
45
40
35
30
Gms
25
20
|S21|²
15
10
5
0
1
2
Gma
3
4 ^GHz
6
f
6
Apr-21-2004