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| BFP620 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor | |||
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BFP620
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 7.5 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 50 mA, VCE = 1.5 V, pulse measured
V(BR)CEO 2.3 2.8
-V
ICES
-
-
10 µA
ICBO
-
-
100 nA
IEBO
-
-
3 µA
hFE
110 180 270 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2
Apr-21-2004
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