BFP193 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP193
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.3
pF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
10V
7
5V
6
3V
5
2V
4
3
1V
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
10V
16
5V
3V
14
2V
12
10
1V
8
0.7V
6
0 10 20 30 40 50 60 70 mA 85
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
13
dB
10V
11
5V
10
3V
9
2V
8
7
6
5
1V
4
3
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
6
Aug-09-2001