BFP193 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP193
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-emitter cutoff current
V_CE = 20 V, V_BE = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
Emitter-base cutoff current
V_EB = 1 V, I_C = 0
DC current gain
I_C = 30 mA, V_CE = 8 V
V_(BR)CEO ¹²
-
-V
I_CES
-
- 100 µA
I_CBO
-
- 100 nA
I_EBO
-
-
1 µA
h_FE
50 100 200 -
2
Aug-09-2001