BFP136W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP136W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
3.0
pF
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8 V 11
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
7.0
GHz
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
8V
5V
3V
2V
1V
0.7V
20 40 60 80 100 120 140 mA 170
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
18
dB
10V
14
12
10
8
3V
2V
1V
0.7V
6
4
2
0
0 20 40 60 80 100 120 140 mA 170
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
dB
10
10V
9
3V
2V
8
7
6
1V
5
4
0.7V
3
2
1
0
0 20 40 60 80 100 120 140 mA 170
I_C
6
Jun-22-2001