BFP136W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

BFP136W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 80 mA, V_CE = 5 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 30 mA, V_CE = 5 V, Z_S = Z_Sopt ,
f = 900 MHz
f_T
4
5.5
- GHz
C_cb
-
1.7 2.5 pF
C_ce
-
0.7
-
C_eb
-
6.8
-
F
dB
-
2
-
f = 1.8 GHz
-
3.3
-
Power gain, maximum available ¹⁾
I_C = 80 mA, V_CE = 5 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
f = 1.8 GHz
Transducer gain

I_C = 80 mA, V_CE = 5 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
G_ma
|S_21e|²
- 15.5 -
-
9.5
-
-
9
-
-
3
-
Third order intercept point
IP₃
I_C = 80 mA, V_CE = 5 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 1.8 GHz
-
33
- dBm
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Jun-22-2001