BFG196 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFG196
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=50mA
dB
0.9GHz
0.9GHz
12
10
1.8GHz
8
1.8GHz
6
4
2
0
0
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
42
dBm
38
36
34
32
30
28
26
24
22
20
18
16
14
0
8V
5V
3V
2V
1V
20
40
60
80 mA
120
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
32
dB IC=50mA
26
24
22
20
18
16
14
12
10
8
10V
6
1V
4
0.7V
2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
V_CE = Parameter
30
I_C=50mA
dB
20
15
10
5
10V
0
1V
0.7V
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
6
Jun-27-2001