BFG196 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor

For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA

Power amplifier for DECT and PCN Systems

f_T = 7.5 GHz
F = 1.5 dB at 900 GHz
BFG196
4
3
2
1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG196
Marking
BFG196
Pin Configuration
1=E 2=B 3=E 4=C
Package
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
90 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ²⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
12
20
20
2
100
12
800
150
-65 ... 150
-65 ... 150

75
Unit
V
mA
mW
°C
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jun-27-2001