BCV29_07 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors

BCV29, BCV49
Transition frequency f_T = ƒ(I_C)
V_CE = 5 V
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ^{3 BCV 29/49}
MHz
f_T
EHP00321
10 ²
5
10 ¹
10 ⁰
10 ¹
10 ² mA 10 ³
Ι_C
Total power dissipation P_tot = ƒ(T_S)
19
pF
15
13
11
CEB
9
7
5
3
1
0
4
8
12
Permissible Pulse Load
P_totmax/P_totDC = ƒ(t_p)
CCB
16 V 22
V_CB/V_EB
1200
mW
800
600
400
200
5 ^{BCV 29/49}
P_{tot max}
P_{tot DC}
10 ²
5
10 ¹
5
EHP00319
D = ^tp
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t_p
T
0
0 15 30 45 60 75 90 105 120 _°C 150
T_S
10 ⁰
10 ^-6 10 ^-5
10 ^-4 10 ^-3
10 ^-2
s 10⁰
t_p
6
2007-03-29