BCV29_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCV29, BCV49
1
2
3
2
Type
BCV29
BCV49
Marking
EF
EG
Pin Configuration
1=B
2=C
3=E
1=B
2=C
3=E
Package
SOT89
SOT89
Maximum Ratings
Parameter
Collector-emitter voltage
BCV29
BCV49
Symbol
V_CEO
Value
Unit
V
30
60
Collector-base voltage
BCV29
BCV49
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Peak collector current
I_CM
Base current
I_B
Peak base current
I_BM
Total power dissipation-
P_tot
T_S ≤ 130 °C
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
40
80
10
500
mA
800
100
200
1
W
150
°C
-65 ... 150
1
2007-03-29