AUIRF7769L2TR_15 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Automotive DirectFET Power MOSFET

10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
DC
10
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0
1
1msec
10
100
VDS , Drain-toSource Voltage (V)
1000
Fig 13. Maximum Safe Operating Area
10
AUIRF7769L2TR
1200
1000
800
ID
TOP
13A
20A
BOTTOM 74A
600
400
200
0
25
50
75
100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
_{J J}
_{1 1}
R_1R1
R_2R2
_{2 2}
R_3R3
_{3 3}
R_4R4
_CC
_44
Ri (°C/W)
0.1080
0.6140
0.4520
Ci= iRi
Ci= iRi
1.47e-05
i (sec)
0.000171
0.053914
0.006099
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 16. Typical Avalanche Current vs. Pulse Width
1.0E-01
6
2015-10-5