AUIRF7769L2TR_15 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Automotive DirectFET Power MOSFET

4.0
ID = 1.0A
3.5
ID = 1.0mA
ID = 250µA
3.0
2.5
2.0
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
400
300
TJ = 25°C
200
100
0
0
TJ = 175°C
VDS = 5V
380µs PULSE WIDTH
20 40 60 80 100 120 140 160
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Trans conductance vs. Drain Current
14
ID= 74A
12
10
8
VDS= 80V
VDS= 50V
VDS= 20V
6
4
2
0
0 50 100 150 200 250 300
QG Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
AUIRF7769L2TR
1000
100
TJ = 175°C
10
TJ = 25°C
TJ = -40°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
125
100
75
50
25
0
25
50
75
100 125 150 175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-10-5