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AUIPS6125RTRL Datasheet, PDF (6/17 Pages) Infineon Technologies AG – LOW EMI CURRENT SENSE HIGH SIDE SWITCH
AUIPS6125R
Truth Table
Op. Conditions
Normal mode
Normal mode
Open load
Open load
Short circuit to GND
Short circuit to GND
Over temperature
Over temperature
Input
H
L
H
L
H
L
H
L
Output
L
H
L
H
L
L
L
L
Ifb pin voltage
0V
I load x Rfb / Ratio
0V
Ifb leakage x Rifb
0V
I fault x Rifb(latched)
0V
I fault x Rifb (latched)
Operating voltage
Maximum Vcc voltage : this is the maximum voltage before the breakdown of the IC process.
Operating voltage : This is the Vcc range in which the functionality of the part is guaranteed. The AEC-Q100 qualification
is run at the maximum operating voltage specified in the datasheet.
Reverse battery
During the reverse battery the Mosfet is turned on if the input pin is powered with a diode in parallel of the input transistor.
Power dissipation in the IPS : P = Rdson rev * I load² + Vcc² / 200ohm ( internal input resistor ).
If the power dissipation is too high in Rifb, a diode in serial can be added to block the current.
Repetitive Avalanche
The AUIR6125R demagnetizes inductive load energy by clamping the output voltage into the body diode of the Power
Mosfet.
The temperature increase during Avalanche clamp can be estimated as follows:
Tj  P  ZTH (tAVALANCHE )
Where: ZTH(t ) AVALANCHE is the thermal impedance at tCLAMP and can be read from the thermal impedance curves given in
the data sheets.
P  Vbr  I : Power dissipation during avalanche clamp
ICLAMP _ AVERAGE
 ICLAMP
2
: Average current during avalanche clamp
t CL

ICL
di
: Avalanche clamp duration
dt
di  VBattery  VBR : Demagnetization current
dt
L
Figure 9 gives the maximum inductance versus the load current in the worst case: the part switches off after an over
temperature detection. If the load inductance exceeds the curve, a freewheeling diode is required.
Over-current protection
The threshold of the over-current protection is set in order to guarantee that the device is able to turn on a load with an
inrush current lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch
off for a lower current due to the over-temperature protection. This behavior is shown in Figure 10.
6 Rev 1.3
2016-11-08