SPW11N80C3_08 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C; t _p =10 µs
parameter: V _GS
21
18
20 V
10 V
6V
15
5.5 V
12
9
5V
6
4.5 V
3
SPW11N80C3
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
2
1.8
1.6
1.4
1.2 ^{4 V 4.5 V 5 V}
10 V
6.5 V
20 V
6V
0
0
5
10
15
20
V _DS [V]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=7.1 A; V _GS=10 V
1.2
1
0.8
1
25
0
5
10
15
20
25
30
I _D [A]
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max; t _p=10 µs
parameter: T _j
40
25 °C
30
0.6
20
98 %
typ
0.4
10
0.2
150 °C
0
-60 -20 20
60 100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 2.9
page 5
2008-10-15
Please note the new package dimensions arccording to PCN 2009-134-A