SPW11N80C3_08 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
SPW11N80C3
Product Summary
V _DS
R _DS(on)max @ T_j = 25°C
Q _g,typ
800 V
0.45 Ω
64 nC
PG-TO247-3
CoolMOS^TM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
SPW11N80C3
Package
PG-TO247-3
Marking
11N80C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
Pulsed drain current²⁾
I _D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
Gate source voltage
V _GS
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=2.2 A, V _DD=50 V
I _D=11 A, V _DD=50 V
V _DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Mounting torque
M2.5 screws
Value
11
7.1
33
470
0.2
11
50
±20
±30
156
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.9
page 1
2008-10-15
Please note the new package dimensions arccording to PCN 2009-134-A