SPP100N06S2-05 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

5 Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 80 µs
SPP100N06S2-05
240 _{Ptot = 300W}
A
kj
200
180
V_GS [V]
a
4.6
i^b
4.8
c
5.0
160
140
d
5.2
h_e
5.4
f
5.6
120
g^g
5.8
h
6.0
100
i
6.2
f_j
6.4
80
k
10.0
e
60
d
40
c
20
b
a
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
V_DS
7 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 80 µs
160
A
SPP100N06S2-05
SPB100N06S2-05
6 Typ. drain-source on resistance
R_DS(on) = f (I_D)
parameter: V_GS
SPP100N06S2-05
16
d
e
Ω
f
g
h
i
12
10
8
j
6
4
k
2 ^VGS ^{[V] =}
def
5.2 5.4 5.6
ghi j k
5.8 6.0 6.2 6.4 10.0
0
0 20 40 60 80 100 120 140 160 180A 210
I_D
8 Typ. forward transconductance
g_fs = f(I_D); T_j=25°C
parameter: g_fs
160
S
120
120
100
100
80
80
60
60
40
40
20
20
0
0
1
2
3
4
5V
7
V_GS
Page 5
0
0 20 40 60 80 100 120 140 160 A 200
I_D
2003-05-09