SPP100N06S2-05 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
SPP100N06S2-05
SPB100N06S2-05
Symbol
Conditions
Values
Unit
min. typ. max.
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
V_DS≥2*I_D *R_DS(on)max, 68
I_D =100A
V_GS=0V, V_DS =25V,
-
f=1MHz
-
-
V_DD =30V, V_GS =10V,
-
I_D =100A,
-
R_G=2.2Ω
-
-
135 - S
5110 6800 pF
1330 1760
320 480
21 32 ns
31 47
59 88
30 45
Q_gs
V_DD =44V, I_D =100A
Q_gd
Q_g
V_DD =44V, I_D =100A,
V_GS=0 to 10V
V_(plateau) V_DD =44V, I_D =100A
-
27 35 nC
-
53 80
- 130 170
- 5.4 - V
I_S
I_SM
V_SD
t_rr
Q_rr
T_C=25°C
V_GS=0V, I_F=80A
V_R =30V, I_F=l_S,
di_F/dt=100A/µs
-
- 100 A
-
- 400
- 0.9 1.3 V
-
60 75 ns
- 130 160 nC
Page 3
2003-05-09