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SPD04N80C3 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor
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Final data
SPD04N80C3
1 Power dissipation
Ptot = f (TC)
SPD04N80C3
70
W
60
55
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
10 1
10 0
10 -1
10
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10 1
10 2
V 10 3
VDS
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
10 -2
D = 0.02
D = 0.01
single pulse
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
13
A
20V
11
8V
10
7V
9
8
6.5V
7
6
6V
5
4
5.5V
3
2
5V
1
4V
0
0
4
8
12 16 20 V 26
VDS
Page 5
2003-07-02
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