SPD04N80C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPD04N80C3
V_DS
R_DS(on)
I_D
800 V
1.3 Ω
4
A
P-TO252-3-1
Type
SPD04N80C3
Package
Ordering Code
P-TO252-3-1 Q47040-S4563
Marking
04N80C3
Maximum Ratings, at T_C = 25°C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_{D puls}
E_AS
I_D=0.8A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax^{1) E}_AR
I_D=4A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Power dissipation, T_C = 25°C
Operating and storage temperature
I_AR
V_GS
P_tot
T_j , T_stg
Value
4
2.5
12
170
0.1
4
±20
63
-55... +150
Unit
A
mJ
A
V
W
°C
Page 1
2003-07-02