SKB06N60 Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP06N60
SKB06N60
20A
20A
15A
V_GE=20V
10A
15V
13V
11V
9V
5A
7V
5V
15A
V_GE=20V
15V
13V
10A
11V
9V
7V
5V
5A
0A
0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
0A
0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
20A
18A
T_j=+25°C
16A
-55°C
+150°C
14A
12A
10A
8A
6A
4A
2A
0A
0V
2V
4V
6V
8V
10V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 10V)
4.0V
3.5V
I_C = 12A
3.0V
2.5V
I_C = 6A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
5
Mar-00