SKB06N60 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP06N60
SKB06N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower E_off compared to previous generation combined with
low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
C
G
E
Type
SKP06N60
SKB06N60
V_CE
I_C
V_CE(sat)
T_j
Package
600V 6A
2.3V
150°C TO-220AB
TO-263AB
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j , T_stg
Ordering Code
Q67040-S4230
Q67040-S4231
Value
Unit
600
V
A
12
6.9
24
24
12
6
24
±20
V
10
µs
68
W
-55...+150
°C
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Mar-00