SGW50N60HS Datasheet, PDF (5/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology

SGW50N60HS
120A
90A
V_GE=19V
15V
13V
11V
9V
7V
60A
30A
0A _0V
1V
2V
3V
4V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T_j = 25°C)
120A
90A
V_GE=19V
15V
13V
11V
9V
7V
60A
30A
0A _0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T_j = 150°C)
120A
90A
60A
30A
T_J=150°C
25°C
0A
0V
2V
4V
6V
8V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V_CE=10V)
4,0V
I_C=100A
3,5V
3,0V
I_C=50A
2,5V
2,0V
1,5V
I_C=25A
1,0V
0,5V
0,0V
-50°C
Figure 8.
0°C
50°C
100°C
T_J, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(V_GE = 15V)
Power Semiconductors
5
Rev. 2.1 June 06