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SGW50N60HS Datasheet, PDF (10/11 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology | |||
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SGW50N60HS
Ï1
r1
Tj (t)
p(t)
r1
Ï2
r2
r2
Ïn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance LÏ =55nH
an d Stray capacity CÏ =40pF.
Power Semiconductors
10
Rev. 2.1 June 06
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