PTFB211503EL Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Performance
Gain vs. Output Power
V_DD = 30 V, ƒ = 2170 MHz
I_DQ = 1.40 A
18
17
I_DQ = 1.20 A
I_DQ = 0.80 A
16
15
41
43
45
47
49
51
53
Output Power (dBm)
-20
-30
-40
-50
-60
-70
40
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
3rd Order
5th
7th
45
50
55
Output Power, PEP (dBm)
PTFB211503EL
PTFB211503FL
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 2170 MHz
19
60
18
50
17
16
15
14
42
Gain
Efficiency
+25º C
+85º C
–10º C
44
46
48
50
Output Power (dBm)
40
30
20
10
52
Data Sheet
5 of 14
Rev. 04, 2011-03-07