PTFB211503EL Datasheet, PDF (4/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
20
50
19
40
Gain
18
30
17
20
16
Efficiency
10
15
40
42 44 46 48 50 52
Output Power, PEP (dBm)
0
54
PTFB211503EL
PTFB211503FL
Two-tone Drive-up
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-15
50
-25
40
Efficiency
-35
30
-45
20
-55
IMD3
10
-65
0
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 1.20 A, P_OUT = 63 W
60
-5
55
-10
IRL
50
-15
45
-20
40
Efficiency
-25
35
-30
30
IMD3
-35
25
-40
20
Gain
-45
15
-50
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Two-tone Drive-up at
Selected Frequencies
V_DD = 30 V, I_DQ = 1.20 A, tone spacing = 1 MHz
-20
2170MHz
-30
2140MHz
2110MHz
-40
-50
-60
-70
41
43
45
47
49
51
53
Output Power, PEP (dBm)
Data Sheet
4 of 14
Rev. 04, 2011-03-07