PTFB211501E Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz

Typical Performance (cont.)
Intermodulation Distortion
vs. Output Power
V_DD = 30 V, I_DQ = 1.20 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-20
3rd Order
-30
5th
-40
-50
7th
-60
40
45
50
55
Output Power, PEP (dBm)
PTFB211501E
PTFB211501F
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1
0.99
0.98
0.97
-20
2A
4A
8A
10 A
12 A
14 A
16 A
0
20
40
60
80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2200
2170
2140
2110
2080
Z Source Ω
R
jX
4.29
–8.14
4.36
–8.34
4.45
–8.53
4.55
–8.74
4.67
–8.95
Data Sheet
Z Load Ω
R
jX
1.49
–4.39
1.52
–4.50
1.55
–4.61
1.58
–4.72
1.62
–4.84
5 of 13
Z₀ = 50 Ω
Z Load
0.1
2200 MHz
2080 MHz
Z Source
0. ²
0.3
Rev. 02, 2009-11-19