PTFB211501E Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz

PTFB211501E
PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211501E and PTFB211501F are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 – 2170 frequency band. Features include
I/O matching, high gain, and thermally-enhanced ceramic open-cavity
packages with slotted and earless flanges.
PTFB211501E
Package H-36248-2
PTFB211501F
Package H-37248-2
Single-carrier WCDMA Drive Up
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz
-25
60
-30
50
-35
Efficiency
40
-40
30
-45 _{ACP Low}
20
-50
10
ACP Up
-55
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Typical single-carrier WCDMA performance at
2170 MHz, 30 V, I_DQ = 1.2 A, 3GPP signal, channel
bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
CCDF
- Average output power = 40 W
- Linear Gain = 18 dB
- Efficiency = 32%
- Adjacent channel power = –34 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V,
150 W (CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.2 A, P_OUT = 40 W AVG, ƒ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.5 dB
@ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
17
18
—
dB
Drain Efficiency
η_D
27
32
—
%
Intermodulation Distortion
IMD
—
–34
–32
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 02, 2009-11-19