IPD60R600E6 Datasheet, PDF (5/17 Pages) Infineon Technologies AG – 600V CoolMOS E6 Power Transistor

3
Thermal characteristics
600V CoolMOS™ E6 Power Transistor
IPx60R600E6
Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R600E6)
Parameter
Symbol
Values
Min.
Typ.
Thermal resistance, junction - case R_thJC
-
-
Thermal resistance, junction -
R_thJA
-
-
ambient
Soldering temperature,
T_sold
-
-
wavesoldering only allowed at
leads
Max.
2.0
62
260
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 4 Thermal characteristics TO-220FullPAK (IPA60R600E6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case R_thJC
-
-
4.5
Thermal resistance, junction -
R_thJA
-
-
80
ambient
Soldering temperature,
T_sold
-
-
260
wavesoldering only allowed at
leads
Unit Note /
Test Condition
°C/W
leaded
°C 1.6 mm (0.063 in.)
from case for 10 s
Table 5 Thermal characteristics TO-252 (IPD60R600E6)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case R_thJC
-
-
2.0
°C/W
Thermal resistance, junction -
R_thJA
-
-
62
ambient
SMD version, device
on PCB, minimal
footprint
35
SMD version, device
on PCB, 6cm² cooling
area¹⁾
Soldering temperature,
T_sold
-
-
260
°C reflow MSL1
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
FinalData Sheet
5
Rev. 2.0, 2010-04-12