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| IPD60R600E6 Datasheet, PDF (10/17 Pages) Infineon Technologies AG – 600V CoolMOS E6 Power Transistor | |||
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Table 14
Typ. output characteristics TC=25 °C
600V CoolMOS⢠E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
ID=f(VDS); Tj=125 °C; parameter: VGS
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=2.4 A; VGS=10 V
FinalData Sheet
10
Rev. 2.0, 2010-04-12
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