IPB70P04P4-09 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

5 Typ. output characteristics
I _D = f(V _DS); T _j = 25 °C; SMD
parameter: V _GS
300
-10V
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
6 Typ. drain-source on-state resistance
R _DS(on) = (I _D); T _j = 25 °C; SMD
parameter: V _GS
60
-5V
-5.5V
50
200
-7V
40
30
-6.5V
100
0
0
1
2
3
4
-V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = -6V
parameter: T _j
280
210
-6V
20
-5.5V
10
-5V
-6V
-6.5V
-7V
-10V
0
5
6
0
36
72
-I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = -70 A; V _GS = -10 V; SMD
11
10
9
140
70
0
2
Rev. 1.3
175 °C
25 °C
-55 °C
3
4
5
6
-V _GS [V]
8
7
6
7
8
5
-60 -20
20
60 100 140 180
T _j [°C]
page 5
2011-02-14