IPB70P04P4-09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

®
OptiMOS -P2
Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPB70P04P4-09
IPI70P04P4-09, IPP70P04P4-09
Product Summary
V _DS
R _DS(on) (SMD Version)
I_D
-40 V
9.1 mW
-70 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB70P04P4-09
IPI70P04P4-09
IPP70P04P4-09
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4P0409
4P0409
4P0409
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25°C,
V _GS=-10V
T _C=100°C,
V _GS=-10V
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I _D,pulse T _C=25°C
E _AS
I _D=-36A
I _AS
-
V _GS
-
P _tot
T _C=25 °C
T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.3
page 1
Value
Unit
-72
A
-50
-288
24
mJ
-72
A
±20
V
75
W
-55 ... +175
°C
55/175/56
2011-02-14