IPB180P04P4L-02 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

Final Data Sheet
IPB180P04P4L-02
5 Typ. output characteristics
I _D = f(V _DS); T _j = 25°C
parameter: V _GS
700
-5 V
-10 V
600
500
400
300
200
100
0
0
1
2
3
4
-V _DS [V]
7 Typ. transfer characteristics
I _D = f(V _GS); V _DS = -6V
parameter: T _j
700
6 Typ. drain-source on-state resistance
R _DS(on) = f(I _D); T _j = 25°C
parameter: V _GS
20
-2.8 V -3 V
18
-3.5 V
-4.5 V
16
14
12
-4 V
10
8
6
-3.5 V
4
2
-3 V
0
5
6
0
-4 V
-4.5 V
-10 V
50
100
150
-I _D [A]
8 Typ. drain-source on-state resistance
R _DS(on) = f(T _j); I _D = -100A; V _GS = -10V
3
600
2.5
500
400
2
300
200
100
175 °C
25 °C ^{-55 °C}
0
0
1
2
3
4
5
6
-V _GS [V]
1.5
1
-60 -20
20
60 100 140 180
T _j [°C]
Rev. 1.3
page 5
2011-04-27