IPB180P04P4L-02 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-P2 Power-Transistor

Final Data Sheet
IPB180P04P4L-02
®
OptiMOS -P2
Power-Transistor
Product Summary
V _DS
R _DS(on),max
I_D
-40 V
2.4 mW
-180 A
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
Type
IPB180P04P4L-02
Package
PG-TO263-7-3
Marking
4QP04L02
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C,
V _GS=-10V¹⁾
T _C=100°C,
V _GS=-10V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25°C
Avalanche energy, single pulse
E _AS
I _D= -90A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25°C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
PG-TO263-7-3
Gate
Pin 1
Drain
Pin 4, Tab
Source
Pin 2, 3, 5, 6, 7
Value
Unit
-180
A
-140
-720
84
mJ
-180
A
±16³⁾
V
150
W
-55 ... +175
°C
55/175/56
Rev. 1.3
page 1
2011-04-27