IPB025N10N3G Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
300
10 V
6V
250
7.5 V
200
5.5 V
5V
150
100
4.5 V
50
0
0
1
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
300
250
200
150
100
50
0
0
Rev. 2.03
25 °C
175 °C
2
4
V _GS [V]
IPB025N10N3 G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
6
5
4.5 V
5V
4
3
6V
7.5 V
2
10 V
1
0
2
0
40 80 120 160 200 240 280
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
240
200
160
120
80
40
0
6
0
page 5
40
80
120
160
I _D [A]
2009-12-11