IPB025N10N3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

OptiMOS^™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Extremely low on-resistance R _DS(on)
• High current capability
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target application
• Halogen-free according to IEC61249-2-21
Type
IPB025N10N3 G
IPB025N10N3 G
Product Summary
V _DS
R _DS(on),max
I_D
100 V
2.5 mΩ
180 A
Package
Marking
PG-TO263-7
025N10N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C²⁾
T _C=100 °C
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=100 A, R _GS=25 Ω
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1)_{J-STD20 and JESD22}
2) _{See figure 3}
Value
Unit
180
A
167
720
1000
mJ
±20
V
300
W
-55 ... 175
°C
55/175/56
Rev. 2.03
page 1
2009-12-11