IKP01N120H2 Datasheet, PDF (5/14 Pages) Infineon Technologies AG – HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

IKP01N120H2
5A
I_c
4A
3A
T =80°C
C
2A
T =110°C
C
1A
I_c
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 800V,
V_GE = +15V/0V, R_G = 241Ω)
10A
t_p = 1 µs
2µs
1A
5µs
0,1A
20µs
50µs
200µs
,01A
1V
DC
10V
100V 1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C)
30W
25W
20W
15W
10W
5W
0W
25°C 50°C 75°C 100°C 125°C 150°C
T_C, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T_j ≤ 150°C)
4A
3A
2A
1A
0A
25°C 50°C 75°C 100°C 125°C 150°C
T_C, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
Power Semiconductors
5
Rev. 2.3 May 06