IKP01N120H2 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
G
E
- optimised for soft-switching / resonant topologies
• 2^nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E_off optimized for I_C =1A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC² for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-220-3-1
Type
IKP01N120H2
V_CE
I_C
1200V 1A
E_off
0.09mJ
T_j
150°C
Marking
Package
K01H1202 PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T_C = 25°C, f = 140kHz
T_C = 100°C, f = 140kHz
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Gate-emitter voltage
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
I_F
V_GE
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
3.2
1.3
3.5
3.5
3.2
1.3
±20
V
28
W
-40...+150
°C
260
2 _{J-STD-020 and JESD-022}
Power Semiconductors
1
Rev. 2.3 May 06