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| IDP45E60_14 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Fast Switching Emitter Controlled Diode | |||
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IDP45E60
5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
450
ns
90A
350
45A
22.5A
300
250
200
150
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR = 400V, Tj = 125 °C
4000
nC
90A
3000
45A
2500
2000
22,5A
1500
100
200 300 400 500 600 700 800 A/μs 1000
diF/dt
7 Typ. reverse recovery current
Irr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
35
1000
200 300 400 500 600 700 800 A/μs 1000
diF/dt
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
8
A
90A
45A
22.5A
25
7
6.5
90A
6
20
5.5
45A
5
15
22,5A
4.5
4
10
3.5
5
200 300 400 500 600 700 800 A/μs 1000
diF/dt
3
200 300 400 500 600 700 800 A/μs 1000
diF/dt
Rev.2.5
Page 5
2013Â12Â05
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