IDP45E60_14 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Fast Switching Emitter Controlled Diode

IDP45E60
F^Fa^as^st^t S^Sw^wiⁱt^tc^ch^hiⁱnⁿg^g D^Ei^mod^ite^{ter Controlled Diode}
Features
• 600V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC for target applications
Product Summary
V_RRM
I_F
V_F
T_jmax
600 V
45 A
1.5 V
175 °C
PG-TO220-2
Type
IDP45E60
Package
PG-TO220-2
Ordering Code Marking Pin 1 PIN 2 PIN 3
-
D45E60 ^C
A
-
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
PPaararammeterter
SymSybmobl ol
R^Re^ep^pet^eit^tiv^ite^ivp^ee^pak^eare^kve^rers^ve^ev^ro^sl^etag^ve^oltage
C^Co^onⁿtin^tiuⁿo^ou^us^sfo^fr^ow^ra^wr^ad ^rc^dur^cre^un^rrt ^ent
T_TCC=₌₂2₅5_°_CC
T_TCC=₌₉9₀0_°_CC
S_Su_urg_rge _eno_nn_or_nep_re_et_piti_ev_te_itf_io_vr_ew_fa_ord_rwc_aur_rr_den_ct_urrent
T_C = 25C, t_p = 10 ms, sine halfwave
M^Ta^Cx⁼i²m⁵u^°m^C, r^te^pp⁼e¹t⁰iti^mve^s,fo^srⁱⁿw^ear^hd^alc^fwur^ar^ve^ent
T^M_C ^a=^x2^im5C^um, t_p^rl^eim^pi^ete^td^itib^vy^et_j^f_,m^o_a^r_x^w, D^ar=^d0^c.5^urrent
P^To^Cw⁼e²r⁵d^°Cis^,s^ti^ppa^lit^mioⁱn^{ted by Tjmax, D=0.5}
T^P_C^o=^w2^e5^rC^dissipation
T_TCC=₌₂9₅0_°_CC
O_Tp_Ce₌r₉a₀ti_°n_Cg junction temperature
S_Oto_pra_eg_rae_tt_ie_nm_gp_ae_nra_dtu_sre_{torage temperature}
S_So_old_lder_ein_rg_int_gem_tep_mer_pa_etu_rr_ae_ture
1_w.6_am_vem_so(_l0_d._e0_r6_in3_gi_,n₁.)_.6fr_mo_mm ₍c₀a_.s₀e₆₃fo_inr _.1₎0_fros_{m case for 10s}
V_{RRVMR R M}
I_F
I_F
I_{FSMI F S M}
I_FRM^I F R M
P_{totPt o t}
T_j
T_j , T^T_s^st_t^g_g
T_{S TS}
Rev.2.5
Page 1
VaVlauleue
60₆0₀₀
71⁷¹
47⁴⁷
16₁2₆₂
11¹1¹.¹5^.5
UUnint it
V^V
A
A
A
A
187
W^W
18¹7⁰⁶
-4₁0₀…₆+175
-55^-5..⁵.+^...1⁺7¹5⁵⁰
°C^°C
26₂0₆₀
°C
2013­12­05