IDB30E60_13 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Fast Switching Emitter Controlled Diode

5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
500
ns
400
60A
350
30A
15A
300
250
IDB30E60
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 400V, T_j = 125 °C
2600
nC
60A
2200
2000
1800
30A
1600
200
1400
15A
150
1200
100
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
26
A
1000
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 400V, T_j = 125°C
12
22
20
60A
30A
15A
18
16
14
12
10
8
10
9
60A
30A
15A
8
7
6
5
4
6
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
3
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2.4
Page 5
2001039-1-023-0-504