IDB30E60_13 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Fast Switching Emitter Controlled Diode

F^Fa^as^st^t S^Sw^wiⁱt^tc^ch^hiⁱnⁿg^g E^Em^mC^itto^en^r D^Ci^ooⁿd^te^{rolled Diode}
Feature
• 600_VV_EE_mm_itC_teo_rn_Cte_oc_nh_trn_oo_lll_eo_dgy_technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
IDB30E60
Product Summary
V_RRM
I_F
V_F
T_jmax
600 V
30 A
1.5 V
175 °C
2
1
3
PG-TO263-3
* RoHS compliant
Type
IDB30E60
Package
PG-TO263-3
Ordering Code Marking Pin 1 PIN 2 PIN 3
-
D30E60 NC
C
A
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
PPaararammetetrer
SymSybmobl ol
R^Re^ep^pet^eit^tiⁱv^te^ivp^ee^pak^eare^kve^rers^ve^ev^ro^sl^etag^ve^oltage
CCoonntintiunoouussfofrowrwaradrcdurcreunrrtent
T_TCC=₌₂2₅5_°_CC
T_TCC=₌₉9₀0_°_CC
S_Su_urg_rge_eno_nn_or_nep_re_et_piti_ev_te_itf_io_vr_ew_fa_ord_rwc_aur_rr_den_ct_urrent
T_C = 25C, t_p = 10 ms, sine halfwave
M^TCax⁼i²m⁵u^°m^C, r^te^pp⁼e¹t⁰iti^mve^s,fo^srⁱⁿw^ear^hd^alc^fwur^ar^ve^ent
T^M_C ^a=^x2^im5^uC^m, t_p^rl^eim^pi^ete^td^itib^vy^et_j^f_,m^o_a^r_x^w, D^ar=^d0^c.5^urrent
P^To^Cw⁼e²r⁵d^°Cis^,s^ti^ppa^lit^mioⁱn^{ted by Tjmax, D=0.5}
T^P_C^o=^w2^e5^rC^dissipation
T_TCC=₌₂9₅0_°_CC
O_Tp_Ce₌r₉a₀ti_°n_Cg junction temperature
S_Oto_pr_eag_rae_tt_ie_nm_gp_ae_nra_dtu_sr_te_{orage temperature}
S_So_old_lder_ein_rig_nt_gem_tep_mer_pa_etu_rr_ae_ture
1_r._e6_flm_owm_s(_o0_l._d0_e6_r3_ini_gn_,.)_Mfr_So_Lm₁ case for 10 s
V_{RRVMR R M}
I_F
I_F
I_{FSMI F S M}
I_FRM^I F R M
P_{totPt o t}
T_j
T_j , T^T_s^st_t^g_g
T_{S TS}
Rev.2.4
Page 1
VaVlauleue
60₆0₀₀
52⁵.²3^.3
34³.⁴9^.9
11₁7₁₇
81⁸¹
UUnint it
V^V
A
A
A
A
142.9
W^W
142⁸⁰.9^.9
-₈40₀…_.9+175
-55^-5..⁵.+^...1⁺7¹5⁵⁰
°C^°C
26₂0₆₀
°C
2₂0₀1₀3₉-1_-02-₃0_-5₀₄