IDB30E120_07 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 800V, T_j = 125°C
1100
ns
900
800
60A
30A
15A
700
600
500
400
300
200
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 800V, T_j = 125°C
35
IDB30E120
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 800V, T_j = 125 °C
6500
nC
60A
5500
5000
30A
4500
4000
3500
15A
3000
2500
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 800V, T_j = 125°C
18
A
60A
30A
15A
25
20
15
10
14
60A
12
30A
15A
10
8
6
5
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2.2
Page 5
4
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
2007-09-01