IDB30E120_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDB30E120
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=25°C
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=125°C
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=150°C
t_rr
- 243 -
- 355 -
- 380 -
Peak reverse current
V_R=800V, I_F = 30 A, di_F/dt=850A/µs, T_j=25°C
V_R=800V, I_F =30A, di_F/dt=850A/µs, T_j=125°C
V_R=800V, I_F =30A, di_F/dt=850A/µs, T_j=150°C
I_rrm
- 23.7 -
- 28.3 -
- 29.5 -
Reverse recovery charge
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=25°C
V_R=800V, I_F =30A, di_F/dt=850A/µs, T_j=125°C
V_R=800V, I_F =30A, di_F/dt=850A/µs, T_j=150°C
Q_rr
- 2630 -
- 4700 -
- 5200 -
Reverse recovery softness factor
S
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=25°C
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=125°C
V_R=800V, I_F=30A, di_F/dt=850A/µs, T_j=150°C
-
6
-
-
7.4
-
-
7.5
-
Unit
ns
A
nC
Rev.2.2
Page 3
2007-09-01