IDB15E60 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDP15E60
IDB15E60
5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
500
ns
400
350
30A
300
15A
7.5A
250
200
150
100
50
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 400V, T_j = 125 °C
1450
nC
30A
1250
1150
15A
1050
950
850
7.5A
750
650
0
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
18
A
550
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 400V, T_j = 125°C
11
16
30A
15
15A
7.5A
14
13
12
11
10
9
8
7
6
5
4
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
9
8
30A
7
15A
6
5
7,5A
4
3
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2
Page 5
2003-07-31