IDB15E60 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDP15E60
IDB15E60
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=25°C
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=125°C
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=150°C
t_rr
-
87
-
- 124 -
- 131 -
Peak reverse current
V_R=400V, I_F = 15A, di_F/dt=1000A/µs, T_j=25°C
V_R=400V, I_F =15A, di_F/dt=1000A/µs, T_j=125°C
V_R=400V, I_F =15A, di_F/dt=1000A/µs, T_j=150°C
I_rrm
- 13.7 -
- 16.4 -
- 19.3 -
Reverse recovery charge
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=25°C
V_R=400V, I_F =15A, di_F/dt=1000A/µs, T_j=125°C
V_R=400V, I_F =15A, di_F/dt=1000A/µs, T_j=150°C
Q_rr
- 595 -
- 995 -
- 1104 -
Reverse recovery softness factor
S
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=25°C
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=125°C
V_R=400V, I_F=15A, di_F/dt=1000A/µs, T_j=150°C
-
3.6
-
-
4.3
-
-
4.5
-
Unit
ns
A
nC
Rev.2
Page 3
2003-07-31