IDB09E60_07 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDB09E60
5 Typ. reverse recovery time
t_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
350
ns
6 Typ. reverse recovery charge
Q_rr=f(di_F/dt)
parameter: V_R = 400V, T_j = 125 °C
800
nC
18A
700
250
18A
650
9A
4.5A
600
9A
200
550
500
150
4.5A
450
400
100
350
50
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
7 Typ. reverse recovery current
I_rr = f (di_F/dt)
parameter: V_R = 400V, T_j = 125°C
14
A
18A
12
9A
4.5A
11
300
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
8 Typ. reverse recovery softness factor
S = f(di_F/dt)
parameter: V_R = 400V, T_j = 125°C
14
18A
10
9A
4.5A
10
8
9
6
8
7
4
6
2
5
4
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
0
200 300 400 500 600 700 800 _A/µs 1000
di_F/dt
Rev.2.2
Page 5
2007-09-01